通过对两个串联的漏电电容器暂态过程的分析和计算，研究此过程中两个电容的电压、电流及能量的变化规律。
The voltages, the electric currents and the energies of two capacitors with leakage current connected in series are studied by the means of the qualitative analysis and the quantitative calculations.
这类应用可能包括电容器的漏电流、二极管反向漏电、电缆或薄膜的绝缘电阻等。
Some of these applications may include leakage current of capacitors, reverse diode leakage, or insulation resistance of cables or films.
为了保证低泄漏电流和低介电吸收，反馈电容器应当由合适的介电材料(如聚苯乙烯、聚丙烯或聚四氟乙烯)制成。
To ensure low leakage current and low dielectric absorption, the feed back capacitor should be made of a suitable dielectric material such as poly styrene, polypropylene, or Teflon.
老练电压对铝电解电容器容量和漏电流的影响。
The effect of aging voltage on the capacitance and leakage current of al electrolytic capacitors.
弱电流测量的各种应用包括电容器的漏电、弱电流半导体、光和离子束测量等。
Low current measurement applications include capacitor leakage, low current semiconductor, light, and ion beam measurements.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
贮存超过2年的电容器，其漏电流可能增大。
Leakage current of the capacitors that have been stored for more than 2 years may increase.
数据一旦被写进DRAM，每个小电容上电荷的存储时间就必须大于DRAM的刷新脉冲时间，如果由于漏电流致使存储的电荷丢失，就会导致数据读取的误操作。
Once data has been written in DRAM, charges stored in each capacitor must maintain more than the refresh time so that the information stored in each DRAM cell can be read out correctly.
分析表明，从多个子列的氧化层电容漏电合格率的曲线可以求出氧化层完整性的表征因子E 值（每个缺陷包含的单元数）。
Analyses show that the characteristic factor for oxide integrity E , i. e. the number of elements per defect, can be calculated from oxide capacitor leak current yield curves.
钽电解电容器具有阻抗低、漏电流小、高频特性好、可靠性高等特点，而耐久性试验是对电容器产品综合性能最严峻的考验。
The endurance test is a rigorous test for the total performace of a tantalum electrolytic caparitor due to its low impedance, small leakage, high frequency charateristics and high reliability.
当电缆的长度增加时，其电缆电阻、电容和泄漏电流等参数也会变化。
Parameters like cable resistance, capacitance, and leakage currents change as cable length increases.
工艺和性能模拟分析表明，此结构具有SOI器件低泄漏电流和低输出电容的特性，而且能抑制自加热效应和浮体效应。
The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capacitance, which also suppressed the self-heating effects and floating body effects.
在给出多种模型DC方程和源漏电容公式的同时，对三种电路模拟程序的应用范围进行了分析。
The DC equation and source drain capacitance formula of the models are given and the application range of three circuit simulation programs is analysed.
对电容器漏电法测高阻中电容器所需充电时间首先从理论的角度进行定量计算，然后结合具体实例确定了充电时间。
Necessary charging time of capacitor in measuring high resistance with leakage current method is quantitatively calculated in theory and illustrated with examples.
然而，要使用电容器就必须明白其特性：包括电容值、额定电压值、温度系数以及泄漏电阻等。
However, to be useful, they must be characterized for capacitance value, voltage rating, temperature coefficient, and leakage resistance.
当电容器上所施加电压高于额定工作电压时，电容器的漏电流将上升，其电气特性将在短时内劣化直至损坏。
When capacitor is used at higher voltage than the rated voltage, leakage current increases, characteristics drastically deteriorate and damage in a short period may occur as a result.
对储能大电流放电用高压大容量铝电解电容器，要求其漏电流小、等效串联电阻值小、电容量稳定性好、一致性好等。
As electrolytic capacitors of high voltage and capacitance for energy storage and high current discharge, lower leakage current, lower ESR and more stable and constant capacitance are required.
设备漏电容易引起火灾，触电会导致人身伤亡事故。
Leak electricity is easy to result in fire. Electric shock may arise accident.
线路设计时应该注意，POSCAP是有极性的电容器，反向电压会造成漏电流加大或短路。
Circuit design should be noted, POSCAP is polarized capacitors, the reverse voltage will cause increased leakage current or short circuit.
本文介绍了一种用于测量电解电容器漏电流的电路。
This article introduces a kind of circuit that is applied to measure the leaking current of the oxide film capacitor.
本文介绍了一种用于测量电解电容器漏电流的电路。
This article introduces a kind of circuit that is applied to measure the leaking current of the oxide film capacitor.
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