实验结果表明，这种改进的倒装焊技术可以使HEMT 器件的饱和漏极电流提高10%。
Thedrain saturation current is increased 10% after bonding. To disperse heat of GaNHEMT, this flip chip bonding method seems to be simple and effective.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
这个波形可以被看作是下列原理的叠加(图22和平台5)。全部这些波形的叠加整合结果变成图21所示的典型漏极电流。
This waveform can be presented as a superposition of the following elements (Fig. 22 and Tab. 5). The superposition of all these elements results in a typical drain current shown in Fig. 21.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
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