研究半导体器件的漂移-扩散模型方程解的渐近性。
The asymptotic behavior of the drift diffusion model for semiconductor devices is studied.
研究带雪崩项的半导体漂移-扩散模型方程弱解的惟一性问题。
The uniqueness problem of the weak solutions of the time dependent drift diffusion model for semiconductor equation with avalanche term is considered.
研究了一类带有非线性迁移率的漂移-扩散模型的混合边值问题。
In this paper we consider the following drift-diffusion model with nonlinear mobility.
基于改进的漂移-扩散模型研究了光伏型光电探测器的材料参数对其光电特性的影响。
The influences of parameters of a photovoltaic detector on its photovoltaic behavior were studied based on improved drift-diffusion model.
结果显示，短期利率扩散过程的漂移函数和扩散函数都是非线性的，短期利率的概率分布不服从参数模型所假设的分布。
The testing result discloses that the drift and diffusion function are nonlinear, and the distribution of interest rate does not follow the specification in the parametric models.
提出一种基于半导体器件漂移扩散模型并结合交替方向隐式时域有限差分(AD I -FDTD)法的新型全域FDTD法。
A novel global FDTD scheme based on a drift-diffuse model of semiconductor combined alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented in this paper.
使用泊松方程、漂移扩散模型和N—S方程对介质阻隔面放电等离子体控制边界层流动进行了一体化数值模拟。
The boundary layer flow control using dielectric barrier surface discharge plasma is simulated using Poisson's equation, drift-diffusion model and N-S equations.
在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
The hydrodynamic and the drift-diffusion models are the most widely used models to describe semiconductor devices today.
在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
The hydrodynamic and the drift-diffusion models are the most widely used models to describe semiconductor devices today.
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