该装置由磁场电源、场线圈及电子束漂移管等组成。
The device consists of magnetic field power supply, coils, and drift chamber of electron beam.
漂移管组件为EBIT提供约束离子的轴向电势阱，是EBIT装置的核心区域。
The drift tube assembly provides the axial trap for ions in an electron beam ion trap (EBIT).
假设它能被用上的话，那么它就能准确地感知指数转换器晶体管的温度，也就能用来对晶体管的漂移进行补偿。
If it can be mounted so that it accurately senses the expo converter transistor's temperature, it can be made to compensate for the transistor's drift.
针对雪崩二极管温度漂移的问题，本文设计和分析一种新型的温度补偿电路，使雪崩二极管达到了最佳雪崩增益。
To solve the problem of temperature drift, a new circuit with temperature compensation is designed and analyzed which enables APD to reach the optimal avalanche gain.
给出的温度补偿晶体管对该脉象传感器的灵敏度温度漂移补偿效果好，有推广应用前景。
Temperature compensate transistor has good compensate effect to sensitivity drift of the pulse image sensor, the results apply equally to other fields.
当电流超过限制值时，过负荷电流继电器自动保护振荡管和整流器，同时可以避免由不当操作所引起的频率漂移。
The over-current relay works to protect oscillation tubes and rectifier, when the current exceeds its limits. Frequency deviation caused by faulty operation is also prevented.
设计制作出一个幅值可调的恒流源及其测试系统，实现稳压二极管电压漂移参数的检测，至关重要。
To design and manufacture a constant-source with adjustable amplitude value and the test system, and to realize the examination of zener diode voltage drift parameter, is very important.
设备采用了普通的漂移晶体管和微波晶体检波器。
In this circuits microwave crystal detectors is adopted for the sampling gate.
本文叙述了一种变形双棱镜的加固设计方法，它能够完全消除温度变化与激光波长漂移对光束输出方向的影响，适于对二极管激光束进行变形。
A ruggedized design method for shaping diode laser beams, which can totally eliminate the effects caused by the temperature change or laser wavelength shift on output beam direction, is described.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
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