拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
针对电压源型空间矢量脉宽调制逆变器的死区效应，提出了一种根据电流矢量判断电流极性的死区补偿方法。
Aimed at dead time effect of voltage-fed space vector pulse width modulation (SVPWM) inverter, a novel compensation method detecting current polarities from the current vector was presented.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
仪器采用双极性脉冲电压作为电导率测量的激励源，较好地解决高纯水电导率测量中的极化效应和电容效应对测量结果的影响。
The instrument adopts the bi-directional pulsed voltage as its exciting source, which has a better solution to the negative of capacitive and polarizational effects at the electrodes.
仪器采用双极性脉冲电压作为电导率测量的激励源，较好地解决高纯水电导率测量中的极化效应和电容效应对测量结果的影响。
The instrument adopts the bi-directional pulsed voltage as its exciting source, which has a better solution to the negative of capacitive and polarizational effects at the electrodes.
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