机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
该金属氧化物层可以在该沟道层与该源极和该漏极之间具有渐变的金属含量。
The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
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