对化学法清洗硅片过程中消除颗粒的机理作了定量的探讨。
A quantitative mechanism of particle removal from silicon wafer surfaces by wet chemical cleaning process was proposed.
用混合酸、清洗剂和纯水在清洗槽或超声波清洗机内清洗硅片，使其表面洁净并烘干。
Wash the wafers with mixed acid, lotion and UPW (ultra pure water) by ultrasonic cleaning in wet sinks to get a clean and dry surface of wafers.
本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。
In experiment, a series of silicon nitride thin films are prepared on cleaned silicon wafer by varying deposition parameters.
本设备为开放式清洗机，具有喷淋、浸泡功能，用于半导体工业硅片及零部件的清洗。
This open-type wet process equipment is used to clean substrates and parts by chemical spraying and soaking.
用于雕刻玻璃、清洗铸件上的残砂、控制发酵、电抛光和清洗腐蚀半导体硅片(与HNO3的混酸)。
Used for engraving glass, cleaning residue on the sand casting, controlled fermentation, power semiconductor wafer polishing and cleaning corrosion (with HNO3 mixed acid).
本发明与传统的硅片清洗剂相比单位成本下降近60%。
Compared with the traditional silicon slice detergent, the unit cost is reduced by about 60%.
本发明与传统的硅片清洗剂相比单位成本下降近60%。
Compared with the traditional silicon slice detergent, the unit cost is reduced by about 60%.
应用推荐