本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
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