金属极板还被深度刻蚀，从而极大地扩展了其表面的面积。
The metal plate is also deeply etched so as greatly to increase its surface area.
本发明还公布了与光成像组合物配合使用，对玻璃，硅晶片、金属基材等进行深度刻蚀的化学刻蚀剂。
The invention also discloses a chemical etching agent matched with the compound to take deep etch to glass, silicon water and metal material.
根据色分离光栅的实际制作过程建立了包含对位误差、占空比误差、刻蚀深度误差、塌边误差等多种制作误差的色分离光栅加工误差模型。
According to the practical fabrication process of CSG, a comprehensive fabrication error model of CSG including alignment error, duty cycle error, depth error and stair slope error is built up.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
比较了相同实验条件下直线轨迹与圆环轨迹的刻蚀深度。
The etching depth of the circles showed a decreasing trend in the same processing conditions.
YG8硬质合金经稀硝酸水溶液化学侵蚀后，表面一定深度内的粘结相钴将被化学刻蚀掉，引起表层疏松。
Cobalt phase was chemically etched to certain depth beneath the surface and porous layer was formed after YG8 cemented carbide had been soaked in aqueous solution of dilute nitric acid.
本文通过对不同掺杂浓度的样品进行刻蚀，发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。
It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.
首先，采用紫外光刻和化学湿法刻蚀技术在玻璃基片上加工微米深度的微通道；
The microchannels were firstly constructed on a glass substrate by standard UV photolithography and wet etching technique.
随着刻蚀深度的增加，光解生成物的脱出变得困难，从而导致刻蚀速率的降低。
With the increase of etching depth, the generated particles are difficult to escape from micro-structures, causes so that the ablation rates decreases.
此时靶面被刻蚀的状态比普通磁控溅射的要均匀得多，刻蚀深度值是从边缘到中间逐渐增大的，在靶面并没有出现通常的刻蚀环，因此这种磁控配置大大提高了靶的利用率。
Besides of those, the pattern of the target is novel after the long time's erosion. There is no erosion ring on its surface, so we can use this method to improve the utilization rate greatly.
它能够在刻蚀深度不理想，甚至是脊型狭缝波导的情况下，保证两侧硅电极之间的电绝缘。
It can maintain electrical isolated for the unideally etched case, and even for the rib-type slot structure.
它能够在刻蚀深度不理想，甚至是脊型狭缝波导的情况下，保证两侧硅电极之间的电绝缘。
It can maintain electrical isolated for the unideally etched case, and even for the rib-type slot structure.
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