加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
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