利用有限元法对微桥结构的测辐射热计进行了二维热模拟。
Two-dimensional thermal simulations of the microbolometer with a micro-bridge structure by finite element method were done.
热敏薄膜电阻制备是非致冷微测辐射热计红外焦平面的一项关键技术。
Preparation of thermal sensitive thin film resistor is one of key technologies in uncooled micro bolometer IR FPA fabrication.
首先与非制冷热电热像仪进行了比较，指出测辐射热计热成像的优势。
After compared with the uncooled pyroelectric thermal imager, the bolometer thermal imager owns the better performance.
微测辐射热计fpa的热设计是非致冷红外探测器设计的难点和关键。
The thermal design of the microbolometer FPA is a difficulty and key problem when an uncooled infrared microbolometer detector is designed.
非致冷微测辐射热计具有较大不均匀性，并且输出响应受衬底温度影响很大。
The output responsivity of uncooled microbolometer is nonuniform, and greatly influenced by the substrate temperature.
由于非均匀性校正的局限性，以前的微测辐射热计需要对基底温度进行精确控制。
Because of the limitation of non uniformity correction, former microbolometer needed to control substrate temperature accurately.
对目前在非致冷微测辐射热计研制中得到成功应用的氧化钒薄膜的特性、制备及表征技术进行综述。
The properties, preparation and characteristics of vanadium oxide thin film, which has been successfully used in un cooled micro bolometer fabrication, are reviewed.
选定多形硅薄膜为微测辐射热计热敏层，并重点从光学和热学两方面对微测辐射热计结构进行了优化设计。
Polymorphous silicon film was selected to be thermal-resistance layer of micro-bolometer, and we optimized the structure of micro-bolometer through optical and thermal design.
介绍了测辐射热汁的工作原理、器件结构的几何形状和研制状况，叙述了测辐射热计材料的特性及制备技术。
The operation, construction and development status of microbolometer are presented. The properties of vanadium oxides thin film and its preparation are introduced.
总结了非制冷测辐射热计的经典数学模型，并分析了探测器热绝缘结构和噪声对性能的影响，指出了性能改进和优化的基本途径。
This paper describes the classical mathematic model of bolometer, the effect of thermal isolation and noise on detector performance are also discussed.
通过改善结构，来研制更小尺寸、更高分辨率的器件，成为微测辐射热计研制的新趋势，而其中最普遍的做法就是使用双牺牲层。
In order to develop high resolution uncooled infrared microbolometer with smaller pixel size, cell structure with double sacrificial layers is a new trend and the most common way for microbolometers.
本论文对实现基于MEMS工艺技术的非制冷型红外测辐射热计的两个主要关键内容进行了深入研究，即敏感器件结构的设计和整个制造工艺流程的合理设计。
Study on designing of sensor device's structures and whole reasonable fabrication process, which are two key issues of uncooled infrared bolometer that based on MEMS technique.
会使用温测电路的原因为CMOS制程并没有其他制程的天线耦合辐射热计所需要的特殊材料。
We use the thermal sensing circuit to replace the special material in antenna coupled bolometer in other process which the CMOS process does not provide.
会使用温测电路的原因为CMOS制程并没有其他制程的天线耦合辐射热计所需要的特殊材料。
We use the thermal sensing circuit to replace the special material in antenna coupled bolometer in other process which the CMOS process does not provide.
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