依据导电沟道内的电势分布，分析沟道宽度变化对OSIT工作特性的影响。
Depending on the potential distribution in the conductive channel, the influence of changing channel width on the operation characteristic of OSIT is analyzed.
根据本研究的需要，选取沟道长度、沟道宽度、沟壑密度和纵比降作为分析沟道变化的判别指标。
Thirdly, according to the research needs, selected gully length, gully width, gully density and vertical slope as the evaluation index.
在共源级已优化的基础上，为了实现低噪声放大器的性能最优，提出了对共栅管的沟道宽度进行优化设计的方法。
On the base of the optimization of source, a method to optimize the whole performance is given by adjusting the channel width of gate.
在此基础上，通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响，进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。
Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA.
对宽度比对组合沟道结构的牺牲层腐蚀特性的影响进行了研究。
Effect of width ratio on the etching behaviour of joint channel structure is studied.
对宽度比对组合沟道结构的牺牲层腐蚀特性的影响进行了研究。
Effect of width ratio on the etching behaviour of joint channel structure is studied.
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