研究了直流等离子体化学汽相沉积（CVD）法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。
The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
本发明涉及自支撑式电极上金属集电器的物理或化学汽相沉积，例如蒸发。
The invention relates to physical or chemical vapor deposition, such as evaporation, of metal current collector on electrode with self-supporting type.
本工作利用透射电镜对电子束增强热丝化学汽相沉积金刚石薄膜的微观结构及生长方式进行了研究。
Microstructure and growth mode of diamond films by electron assisted CVD method have been studied by means of transmission electron microscopy.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
应用推荐