型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
在云母基底上热蒸镀锌膜， 再采用简单的原位氧化方法制备氧化锌薄膜。
Smooth ZnO thin films have been obtained by in situ oxidation of Zinc films on mica surfaces.
近来氧化锌薄膜的p型转化研究是一个热点，人们尝试了不同的方法来实现。
P-type transition of ZnO film has recently attracted considerable interest due to its potential applications. Diverse methods have been researched by many people.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
借助于XRD、SEM等测试手段，对锥状纳米氧化锌薄膜的制备条件、场发射特性和稳定性分析研究。
With the aid in test methods and so on XRD, SEM, Research nanometer zinc oxide thin film preparation condition, field emission performance and stability.
而过多杂质的掺入会导致氧化锌薄膜晶体质量下降，这可能是氨气流量更大时电阻率再一次增大的原因。
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.
用溶胶–凝胶法制备的钴掺杂氧化锌薄膜在不同气氛下退火后均显示室温铁磁性，并且具有不同的载流子浓度。
The room temperature ferromagnetism in Co-doped ZnO films with different carrier concentration fabricated by the sol–gel method at different annealing atmospheres was investigated.
本工作表明使用贫氧靶材直流溅射制备的高阻透明氧化锌薄膜可以应用于薄膜太阳能电池并有效地降低其成本。
This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
本文采用射频辅助脉冲激光沉积(PLD)系统，在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
通过制备掺铝氧化锌(ZAO)薄膜及SEM断口观察进行实验验证，证实该修正方法有助于提高膜厚测量精度。
The experiment of measuring the thickness of ZAO film and SEM fracture inspection proves that the method of correction is useful to improve the measurement precision.
利用压电薄膜和表面微机械技术可实现新型的氧化锌簿膜器件。
A new type of zine oxide (ZnO) thin film devices can be realized utilizing piezoelectric and surface micromachine technology.
在预处理基底上，采用化学溶液沉积法在低温下制备氧化锌纳米柱薄膜。
Zinc oxide nanopillars are synthesized by chemical solution deposition on a pre-coated substrate at a low temperature.
这个团队测量了在由氧化锌纳米颗粒构成的薄膜表面上涂敷氧化铝前后的电子性质。
The team measured the electronic properties of a thin film made of zinc oxide nanoparticles before and after coating its surface with aluminum oxide.
采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。
ZnO: Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.
这个小组实现了在垂直金催化剂层方向上准直生长的氧化锌（ZnO）纳米线，然后仅仅在纳米线阵列顶端沉积由导电金纳米颗粒组成的连续薄膜。
The team grew vertically-aligned ZnO nanowire arrays on gold catalyst layers before depositing a contiguous film consisting of conductive gold nanoparticles exclusively on top of the nanowire array.
本发明属于氧化物半导体薄膜材料领域，特别涉及氧化锌与二氧化钛复合薄膜材料及其制备方法。
The invention belongs to the field of oxide semiconductor film materials, and in particular relates to a zinc oxide and titanium dioxide composite film material and a preparation method thereof.
本发明属于氧化物半导体薄膜材料领域，特别涉及氧化锌与二氧化钛复合薄膜材料及其制备方法。
The invention belongs to the field of oxide semiconductor film materials, and in particular relates to a zinc oxide and titanium dioxide composite film material and a preparation method thereof.
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