因此，形成价态更高的钒氧化物薄膜。
Therefore, formation of high valance vanadium oxide films was obtained.
氧化物薄膜材料在很多领域中发挥着重要的作用。
Oxide thin films have been playing an important role in many fields.
本文对这些氧化物薄膜硅衬底的相互作用也进行了讨论。
The interaction between oxide films and silicon substrates is discussed.
氧化物薄膜的制备已经成为凝聚态物理学的一个研究热点。
The fabrication of thin oxide films has become a hot spot of research in physics of condensed matter.
提出在陶瓷管基体表面用电化学方法沉积氧化物薄膜以实现电加热技术。
This paper presents a electric heating technology with electric chemistry methods by which the oxide film is deposited on the surface of the ceramic tube.
采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟（IWO）透明导电氧化物薄膜。
Transparent conductive, tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.
这些微小的半导体把电子注入到金属氧化物薄膜中，或者说把它“敏化”，从而增强太阳能转换。
These tiny semiconductors inject electrons into a metal oxide film or "sensitize" it to increase solar energy conversion.
间接地证明了含稀有元素y的氧化物薄膜产生了“活性元素效应”，提高了氧化物涂层的附着性。
At the same time it's proved that the "active element effect" has taken place in the Y bearing coating and it's beneficial to the improvement of the adhesion of the oxide coating.
本发明方法获得的P型导电透明氧化物薄膜在透明电子学和新型光电器件领域具有较好的应用前景。
The P-type conductive transparent oxide film obtained by the method of the invention has better application prospect in the fields of transparent electronics and novel photoelectric devices.
在较小的激光能量作用下，所得到的氧化物薄膜均匀生长；当激光能量较高时，氧化物薄膜呈小丘状生长模式。
The oxide growth is nearly homogeneous by laser irradiation at the lower power density but it presents hill-like growth mode by the laser irradiation at the higher power density.
基于ESCA的测量显示该粉末的结合能峰值比不用上述处理 时更靠近低能侧，表明氧化物薄膜具有抗氧化性。
The measurement based on the ESCA reveals that the peak of binding energy of the powder is nearer the low energy side than without treatment, it shows that the oxide film has antioxidation.
柔性透明导电氧化物薄膜以其重量轻、不易碎、成本低等独特的优点而备受青睐，在塑料液晶显示、可折叠太阳能电池等领域得到广泛的应用。
Flexible transparent conductive oxide films have become a focus of research because of some unique advantages, such as light weight, flexibility, cost effective, etc.
文中最后指出了氧化物功能薄膜材料存在的问题，并展望了它的发展前景。
Finally, the existing problems of oxide thin films were pointed out and the developing prospect of them was described.
本论文主要研究对象是两种类型的磁电阻薄膜材料：锰基钙钛矿结构氧化物三明治多层膜和金属颗粒膜。
In this dissertation, we investigate mainly two types of film materials with magnetoresistance effects: the manganese perovskites oxide sandwich films and metal granular films.
对铟锡氧化物(I T O)薄膜的特性和应用，制备方法以及市场情况进行了综述。
The properties and applications, preparation and market situation of indium tin oxide (ITO) films were reviewed.
较薄的薄膜不会在沟道氧化物中造成不好的不均匀性。
A thinner film does not deleteriously contribute to non-uniformities in a tunnel oxide.
综述了透明导电氧化物（TCO）薄膜的结构、光电性能以及TCO薄膜制备技术的研究进展。
Progresses in research on microstructure, electrical and optical properties and preparation technology of TCO thin films are reviewed.
以传统的无机氧化物和导电高分子材料制备的导电薄膜虽然电学性能优良，但综合性能不甚理想。
The traditional inorganic oxide film and conductive polymer film both have high conductivity, but their comprehensive property is not quite well.
通过对XPS图的分析得到硅氧的原子比大约是1：1，这个结果表明对薄膜进行退火后氧化硅薄膜是富硅氧化物。
Analysis by XPS graph obtained silicon atom ratio of oxygen is about 1:1, the results showed that the films were annealed silicon oxide film is rich silicon oxide.
氧化物磁性半导体薄膜的电输 运性质只与材料中氧空位的浓度相关。
Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
文中最后指出了氧化物功能薄膜材料存在的问题，并展望了它的发展前景。
Finally, the existing problems of oxide thin films were pointed out and the developing prospect of them w...
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
当通上电后，一层薄膜或者说是氧化物就会在钛的表面成形，这层氧化物使得钛表面具有了颜色。
When charged with electricity, a light film or oxide will form on the surface of the titanium and this produces color.
SEM分析表明，粗糙表面镀金膜的试样在热处理后，表面薄膜产生了细小的裂痕，但在表面没有探测到氧化物。
SEM analysis shows that there are lots of fine cracks on the rough sample, but oxides are not detected, while the surface of the polished samples is integrity after heat processing.
综述了铟锡氧化物（ITO）薄膜的生产技术概况及其发展趋势。
The technology survey and development tendency of ITO films were reviewed.
柔性衬底氧化物半导体透明导电薄膜的开发和应用将扩大TCO薄膜的应用领域。
The research and development of TCO films (including ITO films and AZO) prepared on flexible substrate will expand more applications.
柔性衬底氧化物半导体透明导电薄膜的开发和应用将扩大TCO薄膜的应用领域。
The research and development of TCO films (including ITO films and AZO) prepared on flexible substrate will expand more applications.
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