本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
列维和他的同事们用原子力显微镜和两片绝缘体（镧氧化铝和锶钛氧化物），研制出了一枚纳米晶体管。
Using an atomic force microscope and two layers of insulators (lanthanum aluminum oxide and strontium titanium oxide), Levy and his colleagues created a nanoscale transistor.
一种具有弱磁性的黑色矿物，见于变质岩和火成岩中，晶体状铁钛氧化物，是钛的来源。
A weakly magnetic black mineral found in metamorphic and plutonic rocks; an iron titanium oxide in crystalline form; a source of titanium.
他可以解释这样的事实：10伏特已经足够开通金属氧化物场效应晶体管的导电沟道。
It can be explained by the fact, that 10v is still high enough to fully open the MOSFETs channel.
总结了ABO3型氧化物可能具有的各种晶体结构类型，以及由此产生的宏观电、光、声学性能。
All kinds of ABO3-type oxides are summarized, including various crystal structure and their electrical, optical, acoustics properties.
树枝状晶体主要是由铁的氧化物——磁铁矿组成。
The branch shape crystallite is mainly composed of iron oxides, i. e. magnetite.
以含稀土氧化物的硼酸盐玻璃为例，计算了玻璃的析晶活化能及晶体生长指数。
Taking borosilicate glasses containing rare-earth oxides as examples both the activation energy of crystallization and crystal growth index were calculated.
用微波加热合成的尖晶石氧化物结晶度好，晶体颗粒呈规则的八面体或多面体形态。
The particles of the spinel oxides prepared in microwave field have very regular octahedron or polyhedron crystal morphology with well crystallization.
用于PDP的该磷光体具有由带正电金属氧化物例如氧化钇构 成的连续晶体层，并因此具有较好的表面特性。
The phosphor for a PDP has a continuous crystalline layer composed of a positively charged metal oxide such as yttrium oxide, and thus has better surface properties.
本文认为金属氢氧化物基本是离子晶体，从阴阳离子之间的电力作用大小和离子水合与极化大小出发，探讨金属氢氧化物的溶解度及规律。
The ruler for solubility of hydroxide is discussed through action of franklinic electricity between anion and cation, the strength of hydrated ion and ionic polarization.
用蒸发凝聚法制备的金属超微粉末的晶体结构与大块材料的晶体结构基本一致，氧化物含量少。
Under the experiment conditions, the crystal structure of the as-prepared ultra-fine metallic powders is almost the same as that of the bulk metal without obvious oxidation.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
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