我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移，由氧化作用产生的非辐射复合中心导致光致发光效率的下降。
The blue shift of the PL peak is a result of oxidation of inner surfaces of PS and the decrease of PL efficiency is attributed to the produce of nonradiative recombination centers during oxidation.
对多孔硅进行氧化、硅烷化、戊二醛交联剂和抗体共价结合处理，制备出生物免疫传感器。
The structure of immunosensor is prepared by the following steps: oxidization, silanization, glutaraldehyde cross-linker, and covalent binding of antibody.
并在其表面沉积了氧化钒热敏薄膜，研究了多孔硅样品的热绝缘性能对氧化钒热敏薄膜阻温特性的影响。
The influence of the thermal isolation of the PS on resistance's sensitivity of VOx film was investigated.
对多孔硅施加阳极氧化表面处理技术，可有效解决多孔硅干燥时出现龟裂及坍塌，破坏原有多孔硅的形貌和本质的问题。
Using the anode oxidation surface treatment technique on ps introduced can efficiently avoid the ps to crack, shrink or collapse during the natural drying process.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
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