在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
发生的事是这样的：在纯净的一个钛和两个氧原子组成的重复单位下，二氧化钛是一种半导体。
What was happening was this: in its pure state of repeating units of one titanium and two oxygen atoms, titanium dioxide is a semiconductor.
这些微小的半导体把电子注入到金属氧化物薄膜中，或者说把它“敏化”，从而增强太阳能转换。
These tiny semiconductors inject electrons into a metal oxide film or "sensitize" it to increase solar energy conversion.
半导体制程技术包括氧化、扩散、热处理、合金化、再流动制程、铜制程及化学机械研磨制程简介。
Introduction to semiconductor manufacturing technology including oxidation, diffusion, alloying, re-flow process, copper process and chemical-mechanical polishing.
简述了半导体光催化氧化法的原理。
The principle of photocatalytic oxidation applied to organic pollutants by using semiconductor materials is described.
以纳米半导体氧化物为催化剂的多相光催化是一种理想的环境污染治理技术，已成为近年来国际上最为活跃的研究领域之一。
Heterogeneous photocatalysis based on semiconductor nano-oxides, is an ideal technology for remedying environmental pollution and has become one of the most active research fields in recent years.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
产品多孔炭具有良好孔结构性能以及良好的热稳定性、抗氧化性能和半导体材料特征。
And also we founded that the resulting porous carbons have good thermal stability, resistance oxidation and electric character.
主要讨论NTC多晶氧化物半导体中晶界对电导的影响。
The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.
利用某些有机烷氧基金属化合物的热分解，可在玻璃、金属、陶瓷或半导体基片上沉积相应的金属氧化物次级发射膜。
A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide.
纳米氧化锌颗粒是重要的氧化物半导体材料，具有广泛的应用范围。
ZnO nanoparticle is an important oxide semiconductor material, which is of potential applications in many areas.
具有二氧化硅类玻璃薄层的无机基底，制备前述基底的方法，涂布剂和半导体器件。
Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device.
化合物中氧空位的形成有利于阴极的电子发射，氧缺位增强了镧氧化合物的半导体性。
The formation of oxygen vacancies enhances semiconductor property of La-O compound and improves greatly the performance of cathodes.
一种制造金属氧化物半导体的方法(500)。
A method of manufacturing a metal oxide semiconductor (500).
研究发现，金属颜料的发射率一般较低，着色颜料的发射率一般都比较高，掺锡氧化铟(ito)半导体颜料红外发射率较低。
It finds that, in general, the emittance of metal pigments is lower, the emittance of coloring pigments is higher, and that of ITO pigments reported in the reference is lower.
对钙钛矿结构氧化物半导体陶瓷中的电子导电机制，也作了进一步的阐明。
The electron conduction mechanism of semiconducting ceramic oxide with perovskite structure was also explained further.
将金属氧化物半导体的栅极构造蚀刻(510)。
A gate structure of the metal oxide semiconductor is etched (510).
纳米二氧化钛是一种新型半导体材料，其化学性质比较稳定且成本低廉、无毒，是一种最有应用潜力的光催化剂。
Titanium dioxide is a new semiconductor material, with stable chemical nature, low cost and be non-toxic characters, it is the most potential applications as a photocatalyst.
在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
用椭圆型喷淋吸收塔，氧化剂、碱吸收治理半导体工业废气中砷、磷、硫、氟、氯、氮氧化物及各种酸。
A dual absorbing tower shower containing oxidant and alkaline absorbant was used for removing arsine, phosphorus, sulfur, fluorine, chlorine and oxynitrides.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
同时，对半导体氧化物气体敏感材料的常温气体敏感特性进行归纳总结，指出其优缺点和需要解决的问题。
At the same time, gas sensitive characteristic of semiconductor oxide was summarized for the normal temperature and some issue should to be solved, which. Was pointed out also.
研究表明，氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC.
半导体型的金属氧化物，如氧化锡(SnO2)、氧化钛(TiO2)和氧化锌(ZnO)，经常作为活性材料用在固态气体传感器件中。
Semiconducting metal oxides such as tin oxide (SnO2), titanium dioxide (TiO2) and zinc oxide (ZnO) are routinely used as active materials in solid state gas sensing devices.
对氧化铟半导体材料在气体传感器中的应用做了简单介绍，包括它作为CO、NO2、O3、H2等气体传感器的应用现状。
Then a simply introduction was gave for the recent application of nanometer In2O3 gas sensors, includes CO gas sensor, NO2 gas sensor, O3 gas sensor, H2 gas sensor and so on.
如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低成本。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
应用推荐