设计了一种紧凑型氢等离子体枪及驱动电路。
A compact hydrogen plasma gun system was designed and tested.
氢等离子体退火对电活性的位错态有显著的钝化作用。
They can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum.
研究了经氢等离子体处理后多壁碳纳米管的场发射性能。
Electronic field emission from hydrogen plasma processed (HPP) multiwall carbon nanotubes (MWNT) films have been investigated.
先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
采用直接蒙特卡洛路径积分方法计算了稠密氢等离子体的物态方程。
The equation of state of dense hydrogen plasma were calculated by Direct Path Integral Monte Carlo approach.
根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。
With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.
结果显示利用氩氢等离子体对金基底材料表面进行处理能有效地提高铜沉积层的均一性。
The results show that Ar-H2 plasma treatment of the Au substrate leads to a significant enhancement of the uniformity of the copper deposition layer.
紫外线成像显示出的绿色漩涡以及可见光形成的图像揭示了氢和硫磺气体的存在，它们受发自四边形的强紫外线的辐射而变热并形成等离子体。
Swirls of green in Hubble's ultraviolet and visible-light view reveal hydrogen and sulfur gas that have been heated and ionized by intense ultraviolet radiation from the Trapezium's stars.
并论证等离子体中氢对折射率的负影响可以忽略不计。
The negative impact of Hydrogen in the plasma to the refractive index is proved to be negligible.
实验中采用了氢氮混合等离子体清洗的方法，提高了清洗的质量。
A better result is got when cleaning sapphire by the plasma of hydrogen mixed with nitrogen.
在同样的本底等离子体条件和弹丸初始参数下，注入氚丸比氢丸的穿透深度增加约40%。
Under the same plasma condition and initial pellet parameters, the penetration depth for tritium pellet increases by 40% in comparison with that of hydrogen pellet.
最后讨论了在经过校温的系统上进行蓝宝石衬底的氢氮等离子体清洗实验，并通过RHEED图像评价清洗结果质量。
The cleaning of hydrogen and nitrogen ECR plasma on sapphire substrates are carried out in the calibrated temperature system and evaluated by analyzing RHEED image in ECR-PEMOCVD system.
在边界等离子体中氢及其同位素分子与电子碰撞可以发生解离反应。
Electron impact-induced dissociation by hydrogen and its isotopic molecule will occur in edge plasma.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
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