本系统中的数字量由PLC控制，数字量主要控制真空系统、烧结炉和化学气相沉积炉中各通气管路中的开关量。
In the system the digital is controlled by PLC, digital is mainly used to control the switch data of pipeline in the vacuum system and metallurgical vessel and CVD vessel.
采用气相沉积的方法在硅油表面成功制备了一种新型的铁薄膜系统，并研究了该薄膜的生长机制及其带状有序结构。
A new iron film system, deposited on silicone oil surfaces by vapor phase deposition method, has been fabricated and its growth mechanism and band-shaped ordered pattern were studied.
本文系统研究了石英钟罩式微波等离子体辅助化学气相沉积装置对沉积金刚石薄膜的影响。
In this paper diamond films were deposited using bell-jar type microwave plasma assisted CVD system.
在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
基于一简单模型和叠加原理，分别研究了单丝和多丝化学气相沉积(CVD)系统的温度场及基底表面的温度分布。
Temperature profile in single and multi filament CVD system and temperature distribution in the substrate surface were analysised based on a simplified model and the addition principle respectively.
本文系统介绍了金属填充碳纳米管的化学气相沉积制备与电子显微学研究。
Carbon nanotubes filled with metal were synthesized through chemical vapor deposition method, and the structure were studied by electron microscopy.
设计并制作了一套具有真空蒸发沉积和化学气相沉积两种薄膜制备功能的系统。
A new thin film preparation system has been devised and assembled. The system owns two kinds of thin film preparation function.
为了满足制备较厚低摩擦系数类金刚石薄膜（DLC）耐磨镀层的实际需求，对在等离子增强化学气相沉积的类金刚石薄膜（W-DLC）中掺钨进行了系统研究。
To meet the requirement for the diamond-like carbon thin films with low friction factor, the tungsten-doped diamond-like carbon(W-DLC)thin films prepared through PECVD were studied in depth.
为了满足制备较厚低摩擦系数类金刚石薄膜（DLC）耐磨镀层的实际需求，对在等离子增强化学气相沉积的类金刚石薄膜（W-DLC）中掺钨进行了系统研究。
To meet the requirement for the diamond-like carbon thin films with low friction factor, the tungsten-doped diamond-like carbon(W-DLC)thin films prepared through PECVD were studied in depth.
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