在正常工作中，发射结正向偏置，基集电结反向偏置。
In typical operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased.
所述第二二极管单元经配置以在所述设备的正常操作期间不呈现正向偏置。
The second diode unit is configured to present no forward bias during normal operation of the apparatus.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
即使在1mV的正向偏置之下，1n3595的漏电流一般会小于1皮安，此电路不会影响10pa或更大电流的测量。
The leakage of the 1n3595 diode is generally less than one picoampere even with 1mv of forward bias, so the circuit won't interfere with measurements of 10pa or more.
二极管1n3595是完成此功能的很好的选择对象，因为其漏电流很低，即使在正向偏置电压为1mV时，漏电流典型值也小于1pa。
The 1n3595 diode is a good choice for this function because it has low leakage current, typically less than 1pa, even with a forward bias of 1mv.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
应用推荐