本文叙述了用有限差法对多集电极横向晶体管电流增益进行三维数值分析。
This paper describes the three dimensional numerical analysis of current gain for the lateral transistor with multiple collectors by using the finite difference method.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
本文对横向PN P晶体管进行了二维分析。
In this paper the two-dimension analysis is given for transversal PNP Transistor.
这种结构还可以构成横向光晶体管，共发射极电流增益为2 ~4倍。
Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.
本研究对生产实际的指导意义在于，有效的提供了一种半导体集成电路制造工艺，能够同时提供纵向NPN晶体管，纵向PN P晶体管以及横向PN P晶体管。
The significance of this article is to propose an effective semi-conductor IC manufacturing process that provides vertical NPN, vertical PNP and lateral PNP transistors.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
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