减小探测光输入功率，选取短波长探测光波长，增加半导体光放大器的腔长和模场限制因子以及大的偏置电流可提高转换光消光比；
Meanwhile extinction ratio of converted signal can be improved with low probe power, short probe wavelength, long cavity length, high confinement factor, and large biased current.
减小探测光输入功率，选取短波长探测光波长，增加半导体光放大器的腔长和模场限制因子以及大的偏置电流可提高转换光消光比；
Meanwhile extinction ratio of converted signal can be improved with low probe power, short probe wavelength, long cavity length, high confinement factor, and large biased current.
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