第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
器件采用了新的“积木式”台面结构，减小了栅-漏反馈电容。
The device used new "building blocks" mesa structure, which reduced gate-drain feedback capacitance.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
以一台300MW汽轮机组的调节级静叶栅为研究对象，就轴封漏汽对叶栅二次流及出口流场的影响进行了数值模拟。
In this paper the effects of gland leakage on the secondary flow and outlet flow fields in the governing stage stator cascade of a 300mw turbine set are simulated numerically.
由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场，使得器件特性严重退化。
A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge, which degrades the device characteristics seriously.
测试表明，器件具有高增益、高栅-漏击穿及低噪声特性。
The measurement has shown that the devices have higher associated gain, higher gate-drain breakdown voltage and lower noise figure.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
只在该栅电极的漏侧形成一个隔层(23)。
A spacer (23) is formed on only the drain side of the electrode.
晶体管包含一栅结构、一源区和一漏区。
The transistor may include a gate structure, a source region, and a drain region.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
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