但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。

However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.

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但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。

However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.

youdao