栅极电路发生故障。
通过减小栅极电路的电阻，栅极电流达到5毫安越早，和SCR之前在AC周期闪光。
By reducing the resistance of gate-circuit, the gate current reaches 5 mA sooner, and the SCR fires earlier in the ac cycle.
利用MOS管、半桥驱动芯片LM27222、栅极驱动变压器等器件，设计了变极性矩形波发生电路。
A rectangular wave generating circuit has been designed with MOSFETs, half bridge driver chip LM27222 and gate drive transformer.
研制的触发系统可以同时触发两路开关，实现了触发系统的紧凑化，同时并能抑制栅极尖峰电压防止其返回触发器内部电路。
The trigger system can trigger two thyratron at the same time, achieved the compact of the trigger system, and it can avoid the grid spike come into the inner circuit of trigger system.
该工具可以产生用于特定设计的制造掩模，该设计包括具有优化的阈值电压的混合栅极晶体管以符合电路设计标准。
The tool may generate fabrication masks for the given design that include mixed gate transistors with threshold voltages optimized to meet circuit design criteria.
在图5 - 1中所示的电路中，可控硅的栅极通过一个电阻器和二极管直接将其阳极连接。
In the circuit shown in Figure 5-1, the gate of the SCR is connected through a resistor and diode directly to its anode.
由于采用了软栅极控制技术，使二点式、无吸收电路成为可能。
Since the limited grid control technology is applied, the 2 point type, non trap circuit becomes possible.
建立了IGBT电路仿真模型，给出了IGBT功率损耗与开关频率和栅极电阻阻值之间关系的仿真结果。
The circuit model for IGBT simulation is provided. The relationships between IGBT power loss and the switch frequency and between IGBT power loss and grid resistance are presented.
解决上述问题的方法是自动控制输出电路MOS管的栅极电压变化率。
This problem can be solved by controlling the variety speed of the G-S(grid-source) voltage of MOS transistors.
介绍了构成IGBT驱动电路的基本要求、栅极驱动功率、栅极电阻和驱动电路形式、常用的驱动模块M 57962l等。
This paper introduces the basic requisition, grid driving power, grid resistance and driving circuit modality of the IGBT. Furthermore, introduces the driving module M57962L of the driving circuit.
下为高侧和低侧输出电压闭锁电路内部防止IX 2120 B从分立功率IGBT转动，直到有足够的栅极电压。
Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage.
文中还介绍了IGBT栅极驱动电路和IGBT电压均衡电路的设计方法，并给出调制器的输出波形。
The design of the grid-driven circuit and the voltage balancing circuit for IGBT are also introduced, giving the output wave of the modulator.
在高频头中的射频电平调节电路中使用了双栅极场效应管；
Employing a bigrid EFT, the modulator circuit in the rf head is designed for rf level control.
本文研究了一种基于动态栅极悬浮技术的ESD保护电路，并根据全芯片ESD防护的要求设计了试验电路。
A dynamic gate floating ESD protection circuit is first analyzed and then designed according to the whole-chip ESD planning.
该文介绍了IGBT的研发新进展，研究了IGBT栅极驱动和保护电路的设计思想，并给出了以EXB840为驱动器的实用电路。
The paper introduces the new trend in IGBT's research and development and the design idea in IGBT's drive and protection circuit, providing the practical circuit based on EXB840.
这样的电路安排能够非常有效的减小栅极至屏级间电容。
Such an arrangement would effectively nullify the grid-to-plate capacitance. The following circuit shows how this can be realized.
栅极电极驱动电路用以于数据电极被驱动时驱动对应的栅极电极。
The grid electrode driving circuit is used to drive correspondent grid electrode when data electrode is driven.
所述检测器可以测量所述功率输送电路的晶体管开关的节点处的电压，尤其是栅极处的电压。
The detectors may measure voltages at nodes of transistor switches of the power delivery circuit, particularly at the gates.
MM5483是一款单片集成电路，采用CMOS金属栅极的低阈值增强模式器件。
MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.
MM5483是一款单片集成电路，采用CMOS金属栅极的低阈值增强模式器件。
MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.
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