不同的栅极电压下的温度漂移也不相同。
Temperature drift with different grid voltage is different, too.
输出功率和漏电流增加的栅极电压的增加。
The output power and drain current increase as the gate voltage increases.
其工作特性依赖于栅极电压和梳状铝电极的结构。
The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.
解决上述问题的方法是自动控制输出电路MOS管的栅极电压变化率。
This problem can be solved by controlling the variety speed of the G-S(grid-source) voltage of MOS transistors.
随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
同时断开电容器C3与地的连接，由此电容器C4上的负载电压波动不会影响IGBTQ2的栅极电压。
The same time capacitor C3 is disconnected from the ground so that the load voltage ripple on capacitor C4 does not influence the gate voltage of IGBT Q2.
下为高侧和低侧输出电压闭锁电路内部防止IX 2120 B从分立功率IGBT转动，直到有足够的栅极电压。
Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
当施加到阳极的电压再次变为正的栅极将再次触发可控硅上。
When the voltage applied to anode again becomes positive the gate will trigger the SCR on again.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
该工具可以产生用于特定设计的制造掩模，该设计包括具有优化的阈值电压的混合栅极晶体管以符合电路设计标准。
The tool may generate fabrication masks for the given design that include mixed gate transistors with threshold voltages optimized to meet circuit design criteria.
文中还介绍了IGBT栅极驱动电路和IGBT电压均衡电路的设计方法，并给出调制器的输出波形。
The design of the grid-driven circuit and the voltage balancing circuit for IGBT are also introduced, giving the output wave of the modulator.
当施加到阳极的交流电压上升，在正方向上，电流流经可控硅的栅极-阴极部分。
When the AC voltage applied to the anode rises in the positive direction, current flows through the gate-cathode section of the SCR.
由于以分 立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.
以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；
The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
该方法还包括向选择器的栅极施加过度驱动电压以导通选择器。
The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
所述检测器可以测量所述功率输送电路的晶体管开关的节点处的电压，尤其是栅极处的电压。
The detectors may measure voltages at nodes of transistor switches of the power delivery circuit, particularly at the gates.
该耗尽模式部分由该第二栅极栅控，并且适于工作于耗尽模式且可屏蔽该第一栅极免受电压负荷影响。
The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.
研制的触发系统可以同时触发两路开关，实现了触发系统的紧凑化，同时并能抑制栅极尖峰电压防止其返回触发器内部电路。
The trigger system can trigger two thyratron at the same time, achieved the compact of the trigger system, and it can avoid the grid spike come into the inner circuit of trigger system.
它采用了绝缘栅极双极型二极管和电压型换流器，控制和运行方式简单，输出波形好，具有广阔的应用范围和良好的发展前景。
It can be widely used for its easy and simple control and operation as well as for its good output waveforms.
它采用了绝缘栅极双极型二极管和电压型换流器，控制和运行方式简单，输出波形好，具有广阔的应用范围和良好的发展前景。
It can be widely used for its easy and simple control and operation as well as for its good output waveforms.
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