各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。

Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.

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输出功率和漏电流增加的栅极电压的增加。

The output power and drain current increase as the gate voltage increases.

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随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。

With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.

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随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。

With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.

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