解决上述问题的方法是自动控制输出电路MOS管的栅极电压变化率。
This problem can be solved by controlling the variety speed of the G-S(grid-source) voltage of MOS transistors.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；
The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
它采用了绝缘栅极双极型二极管和电压型换流器，控制和运行方式简单，输出波形好，具有广阔的应用范围和良好的发展前景。
It can be widely used for its easy and simple control and operation as well as for its good output waveforms.
它采用了绝缘栅极双极型二极管和电压型换流器，控制和运行方式简单，输出波形好，具有广阔的应用范围和良好的发展前景。
It can be widely used for its easy and simple control and operation as well as for its good output waveforms.
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