介绍了一种能满足该要求的栅控行波管发射机通用浮动板调制器,阐述了其设计方法。
This paper introduces a kind of current floating-board modulator for grid control traveling-wave tube transmitter, which can satisfy the requirement, discusses the design method.
报道了一种新结构的功率栅控晶闸管,称其为槽栅MOS控制的晶闸管(TMCT)。
A new structure of power MOS-gated thyristor named Trench MOS Controlled thyristor (TMCT) is presented.
并运用这些方法对栅控电子枪部件实施计算想的振型与固有频率及相应振型。
The reasonable results of frequency and mode of the component is obtained with these methods.
光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。
Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.
设计并研制出了工作频率为2.5千赫,输出电流从60到250安连续可调的可控硅斩波器及其栅控装置。
A 2.5 KHZ SCR chopper, with the output current controlled continuously from 60a to 250a, and its grid-control device has been designed and built.
采用循环伏安、线性扫描、电镜扫描观察及表面能谱分析等方法对阀控密封铅酸蓄电池的板栅部分不均衡性进行了研究。
The cyclic voltammetry, the linear sweep, SEM observation and surface analyzing technology were used to study non uniform characters of valve regulated lead acid battery.
提出了一种MESFET开关的模型——附加栅控开关模型,适用于MMIC电路的设计,具有很好的宽带微波特性。
This paper discusses a switching model of GaAs MESFET. It is suitable for MMIC design with broad frequency characteristic.
通过对一种栅控行波管的测量,证明本系统可用来监测整管中阴极的活性。
It is proved that this system can also be used to monitor the property of the cathode in the assembled tube by measuring a grid controlled travelling-wave tube.
介绍了最新研制的幅相一致栅控耦合腔行波管的情况,并介绍脉冲相位一致性测试的方法和两支栅控幅相一致耦合腔行波管的功率合成结果。
A phase-amplitude-matched CCTWT has been developed. The power combination experiment of the phase amplitude-matched TWTs and the pulse phase measurement is described and analyzed in this paper.
与其他种类的功率开关器件相比,具有开关速度快,易于实现栅控关断等优点。
Compared with other power device, it has many merits, such as high switch speed, convenient to turn-off by control of gate bias.
该线电压极性检测电路检测线电压的 极性且控制该驱动电路以导通或截止该栅控晶体管。
The line voltage polarity detection circuit detects the polarity of line voltage and controls the drive circuit to conduct or cut off the gate-controlled transistor.
该显示器件具有高的显示亮度,良好的栅控能力以及场致发射特性。
The display device possessed high displaying brightness, better grid control-ability and field emission characteristics.
该显示器件具有高的显示亮度,良好的栅控能力以及场致发射特性。
The display device possessed high displaying brightness, better grid control-ability and field emission characteristics.
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