本文给出求解有限导电媒质平面上方垂直磁偶极源赫兹位函数的解析方法。
In this paper, an analytical approach is described for the evaluation of the Hertz potential of a vertical magnetic dipole over the finitely conducting medium plane.
文中推导出单轴各向异性媒质半空间上方垂直磁偶极源电磁场的精确解析表达式。
We derive an accurate and analytical expression for electromagnetic fields of a vertical magnetic dipole over an anisotropic uniaxial medium half-space.
基于偶极—偶极电极装置的瞬变响应表达式，建立了双极源电场的等效偶极和三次插值的快速近似算法。
This paper deals with the algorithms of equivalent dipole approximation and cubic interpolation for the electric field component of ground electrical bipole source.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
在过去的一个世纪中，白炽灯泡一直为人造灯源的基本产品；但现在，耗能惊人的白炽灯泡注定将被由半导体驱动的发光二极管(LED)所替代。
After a century as a primary source of artificial light these energy-guzzling bulbs are set to be replaced by light-emitting diodes (LEDs), powered by semiconductors.
机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
根据电压源的极性，互相并联的两个二极管(D)中的一个用来减小噪声，而另一个二极管则提供放电通路。
Depending on the polarity of the voltage source, one of the two diodes (d) in parallel is used to reduce noise while the other provides a discharge path.
源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
这里有两条理由可以解释800伏特漏源极电压波形的两个差异。
This can be explained by two major differences of the 800v drain-source voltage waveform.
理想PV电池的模型可以表示为一个感光电流源并联一个二极管。
An ideal PV cell can be modeled as a light-induced current source in parallel with a diode.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
但是，如果目标是精确的重放声音的话，一个扬声器必须是声学上的点声源(单极点，全向响应)，或者是一个声学上小的双向源(偶极)。
But if the goal is to reproduce sounds accurately, then a speaker must be either an acoustic point source (monopole, omni-directional) or an acoustically small bi-directional source (dipole).
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
把这些原理按时序整合呈现出图16所示的典型漏源极电压。
The superposition of all these elements results in a typical drain-source voltage shown in Fig. 16.
硬开关(图26所示)几乎不考虑漏源极电压的最小值。
The hard switching approach (as shown in Fig. 26) doesn't consider the minimum drain-source voltage.
降低漏源极直流母线电压影响干扰信号按傅立叶展开式的全部频带。
The decrease of the drain-source voltage or bus voltage affects the entire spectrum evenly according to Fourier theory.
在该系统中，每个二极管通过两个双刀开关切换至2400型源表。
In this system, each diode is switched to the Model 2400 SourceMeter Instrument through two two-pole switches.
机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
图20描述了漏源极电压主要原理产生的电磁干扰频谱。
The spectra of the main elements of the drain-source voltage can be found in Fig. 20.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
漏泄电流必需前往至源极，它将流经任何热电偶可用的导体、线管、管道、水或大地前往到源极。
The leakage current must be returned to the source, it will flow through any available thermocouple conductor, line pipe, pipeline, water or earth went to the source.
根据张庚骥先生的向量势理论，自然电位不是由偶极层产生，而是由旋度源产生，旋度源在偶极层的边缘。
According to Mr Zhang's vector potential theory, SP doesn't generated or originated from dipole layers but curl sources in the borders of dipole layers.
结果表明，随着工件阴极电压、源极电压和气压的增加，等离子体密度增大。
It is shown that the plasma density increases with increasing workpiece voltage, source voltage and gas pressure.
评论和讨论了高功率固体激光器、光纤激光器、超高效率二极管源和中继镜技术的重大进展。
The significant progress of high power solid-state laser, fiber laser, super high efficiency diode source and relay mirror system are reviewed and discussed.
这是通过一个集成的控制一个功率MOSFET 的源极跟随。
This is done with an integrator which controls a power MOSFET as source follower.
这是通过一个集成的控制一个功率MOSFET 的源极跟随。
This is done with an integrator which controls a power MOSFET as source follower.
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