讨论了极性半导体中表面极化子重正化质量的性质。
In this paper, renormalization mass of the surface polaron in polar crystals were studied.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
有不少极性半导体,电子与体纵光学声子的耦合弱,但与表面光学声子的耦合强。
There isa weak bulk coupling but a strong surface coupling between electrons and phonons for many ionic crystals.
极化子的研究对于解释离子晶体和极性半导体的光跃迁过程及输运现象有重要意义。
The study on this subject plays an important role in explaining the phenomena of light transition and transport in the ionic crystal and polar semiconductor.
本文采用改进了的线性组合算符法导出了极性半导体中与形变势相互作用的表面极化子的有效哈密顿量。
An effective Hamiltonian of surface polaron interacting with the deformation potential in polar crystals was derived by using improved linear combination operator method.
本发明公开了一种形成半导体结构的方法,这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
本发明公开了一种形成半导体结构的方法,这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
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