采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
实验研究了带外腔反馈注入的宽接触条形激光器，并用光线传输矩阵分析了该外腔结构。
A broad area laser diode (BALD) with external cavity feedback is experimentally investigated and analyzed by using ray transfer matrices.
实验研究了带外腔反馈注入的宽接触条形激光器，并用光线传输矩阵分析了该外腔结构。
A broad area laser diode (BALD) with external cavity feedback is experimentally investigated and analyzed by using ray transfer matrices.
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