原子序数越大，杂质能级越深。
The bigger the atomic number, the deeper the impurity level is.
变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
It is believed that the emission peaks were concerned with impurity level in the bandgap.
最后定性地说明了过渡元素杂质能级的化学趋势和一些实验事实。
Finally, the chemical trend and some experimental facts of transition impurity energy levels are qualitatively explained.
通过对电子结构的分析，发现杂质能级的深浅与掺杂元素原子序数有关。
It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.
氮化硅可以通过适当掺杂引入杂质能级，用于制造量子阱获得蓝光激光。
Silicon nitride can be used to grow quantum well for obtaining blue laser by dopanting.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
在这些低维半导体结构中，除了库仑相互作用外，杂质能级还受限制势和结构尺度的影响。
In these low-dimensional structures, besides coulombic interactions, the impurity levels are affected by confining potentials and the dimension of the structures.
天然闪锌矿晶格中丰富的杂质缺陷在禁带中形成杂质能级，可将闪锌矿对光的响应拓展到可见光的波长范围。
The impurity defects, which caused impurity bands in the bandgap, of natural sphalerite could extend its absorbing range to the visible light wavelength range.
它可以用来探测材料中的缺陷及浅能级杂质，显示其分布。
It can be used for investigation to detect defects and shallow impurities, and to show their distributions in semiconductor materials.
本文将单点杂质引入到不可共度势一维体系中，用格林函数方法推导了杂质状态的能级和波函数。
We study the effect of a single impurity in a one dimensional system with incommensurate lattice potential.
本文将单点杂质引入到不可共度势一维体系中，用格林函数方法推导了杂质状态的能级和波函数。
We study the effect of a single impurity in a one dimensional system with incommensurate lattice potential.
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