结构缺陷和杂质含量较小的金刚石膜具有较高的电阻率。
To reduce the content of structure defect and impurity is also an effect way to raise the resistivity of the films.
而过多杂质的掺入会导致氧化锌薄膜晶体质量下降，这可能是氨气流量更大时电阻率再一次增大的原因。
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.
而过多杂质的掺入会导致氧化锌薄膜晶体质量下降，这可能是氨气流量更大时电阻率再一次增大的原因。
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.
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