这些材料在技术上可以透过加入少量的杂质（这个过程称作掺质）而转化成更重要的杂质半导体。
Such materials can be converted into the technologically more important extrinsic semiconductors by addition of small amounts of impurities, a process called doping.
研究者发掘出生成更高质量的晶状半导体精密方法，以减少电子或者正电穴由于杂质而受阻的可能性。
Researchers developed sophisticated methods to grow high-quality semiconductor crystals, reducing the likelihood that electrons or holes will become trapped by defects.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
其中被掺入的磁性原子称作磁性杂质，非磁半导体称作基质。
The magnetic atoms doped are called magnetic impurities and the nonmagnetic semiconductor is called the based material.
在详细阐述碳纳米管传感器工作机理的基础上，用半导体杂质理论和离子对吸附模型对这一最新实验结果作出理论解释。
The Theory of Semiconductor Impurities along with an ion-pair model is used to explain this new experiment phenomenon, based on detailed discussion of the mechanism of SWNT sensors.
磁场对于半导体晶体生长过程中的熔体流动模式有着明显的影响，因而可以改善晶体的组分和杂质的分布。
Because it can affect the mode of fluid in the process of growing semiconductors, the magnetic field can improve the distribution of composite and impurities in the crystal.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
一个非常干净的树脂与极少量杂质，适合半导体等。
A very clean resin with extremely few impurities, suitable for semiconductor etc.
掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
利用变分法研究纤锌矿结构氮化物半导体材料中的浅杂质态问题。
The shallow impurity states in wurtzite nitrides are studied by a variational method.
本文用数值模拟的方法研究了浮区中热毛细对流与溶质浓度毛细对流的耦合，分析了半导体晶体的浮区生长过程中杂质的影响。
The axisymmetrie model is used to study numerically the coupling processes of the ther-mocapillary and the solutalcapillary convection in a floating zone.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
半导体表面、界面和杂质、缺陷；
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
在这些低维半导体结构中，除了库仑相互作用外，杂质能级还受限制势和结构尺度的影响。
In these low-dimensional structures, besides coulombic interactions, the impurity levels are affected by confining potentials and the dimension of the structures.
在这些低维半导体结构中，除了库仑相互作用外，杂质能级还受限制势和结构尺度的影响。
In these low-dimensional structures, besides coulombic interactions, the impurity levels are affected by confining potentials and the dimension of the structures.
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