最后，给出了用本法对两种正性电子抗蚀剂选择最佳曝光剂量的结果和制作的大规模集成电路掩模版的照片。
Finally, the results of selecting the optimum exposure dose for two kinds of electron positive resists and the photos of LSI masks fabricated by this method are given.
最后，给出了用本法对两种正性电子抗蚀剂选择最佳曝光剂量的结果和制作的大规模集成电路掩模版的照片。
Finally, the results of selecting the optimum exposure dose for two kinds of electron positive resists and the photos of LSI masks fabricated by this method are given.
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