固定成本上升引起摩尔第二定律：尽管不是完全相同的速率，随着晶体管成本下降，晶圆成本上升。
Rising fixed costs give rise to Moore's Second Law: as the cost of transistors comes down, the cost of fabs goes up, albeit not at quite the same rate.
相比之下，IBM将石墨烯晶体管植入矽-碳晶圆上，然后涂上绝缘层以防止晶体管短路。
By contrast, IBM grew its graphene transistors on a silicon-carbide wafer, and then added an insulating layer which prevents short circuits in the transistors.
第一款晶体管收音机-丽晶TR - 1（RegencyTR-1），1954年以49.99美元的价格面市，其中包含四个晶体管。
The first transistor radio, the Regency TR-1, went on the market for $49.99 in 1954. The radio contains four transistors.
对于复合扩径管，由于奥氏体粗晶度的原因，也可以采用信号处理系统有效地降低噪音。
It may also use signal process system to decrease noise efficiently for compound expanded pipes, due to austenite rough grain size.
本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
谷歌那帮高管以及在康涅狄格州格林威治购买艺术晶的那帮对~基金经理，这些人都属于这个行列。
They were the Google guys or the art-buying hedge-fund managers in Greenwich, Conn.
其主电路采用全桥式拓扑结构，以IGBT管为功率开关器件，中频变压器使用微晶磁心。
Full bridge topology was used in the main circuit, IGBT was used as power switching device, and micro-crystal core was used in mid-frequency transformer.
该电路包括第一分 支电路，该第一分支电路使得耦合到该电路的输出（34）的第一晶 体管（16）在上升跃迁期间导通并接着断开。
The circuit includes a first subcircuit that causes a first transistor (16) that is coupled to the circuit's output (34) to turn on during a rising transition and then turn off.
轻松集成到X -FAB的模块化XH018和XH035CMOS工艺技术实现的设计，这些新二极管提供最高量子效率可以从晶圆代工。
Easily integrated into designs implemented in X-FAB's modular XH018 and XH035 CMOS process technologies, these new diodes provide the highest quantum efficiency available from a silicon foundry.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
三极管，发光二极管，电解电容，电感，安规电容，晶振等导针式电子元器件立式编带。
Dynatron, light-emitting diode, electrolytic capacitor metalized capacitor, inductance , safety capacitor , crystal oscillator , and other kind of electronic components tape.
研究了用于室温红外探测的非晶硅薄膜晶体管。
The a-Si thin film transistor (TFT) used as room temperature infrared detector is studied.
此外，纳米碳管的加入，使镀层由非晶变成了纳米晶，促进了复合镀层的晶化。
Moreover, adding carbon nanotubes not only improves the degree of crystallization for the composite deposit but also helps their transformation from the amorphous state to the nanocrystal state.
开裂主要原因为液相铜扩散进入奥氏体晶界引起晶界脆化，在应力作用下引起焊管开裂。
The main reason for cracking is liquid copper diffused into the austenite grain boundary and grain boundary embrittlement was caused, so the welded pipe cracked under stress.
从焊缝处的发现的晶粒内存在的大量多边形化的亚晶的现象推断出出现问题的工艺段，通过改进，消除了弯管成型开裂的情况。
We found the place where the processing set-up was wrong by analysing the phenomenon and solved the cracking problem through the improvement.
而要是使晶圆像留声机唱盘那样旋转，让含有奈米碳管的溶剂附著在晶圆表面，也还是有问题。
Alternatively, coating the wafer with a nanotube-containing solvent by spinning the disk like a phonograph record also had its problems.
晶圆级，激光微调，薄膜电阻和温度，真实姿态补偿NMOS管开关保证在整个工作温度和特殊林耳和经营范围的增益稳定性。
Wafer-level, laser-trimmed, thin-film resistors and temperature-compensated NMOS switches assure operation over the full operating temperature range with exceptional lin- ear and gain stability.
KDS拥有国际先进的Crystal晶振的制造工艺以及对于产品质量的管控，每个产品都可以满足您的设计要求。
KDS Crystal oscillator with the international advanced manufacturing processes and for product quality control, each product can meet your design requirements.
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
应用推荐