详细地介绍了可控硅整流器(SCR)线型触发器的改进型设计方案，提出了用于高脉冲重复频率的双极晶体管触发器的实用新电路。
An improved plan of silicon controlled rectifier (SCR) line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
该芯片的判决电路采用SCFL(源级耦合晶体管逻辑)的D触发器结构，根据矢量叠加原理设计，采用差动电流放大器构成可调移相器。
The decision circuit of the chip is applied with a DFF using SCFL structure and its tuned phase shifter with differential current amplifiers according to the principle of vector addition.
这就是说，电路并不在晶体管层次进行设计，而是在门电路、触发器和存储模块的级别进行设计的。
This means, that the circuit is not designed on the level of transistors , but on the level of gates, flips-flops.
在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。
The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.
在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。
The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.
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