对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
现在研究者正在努力优化器件结构、石墨烯性质和栅极电介质以提高晶体管性能。
The team is now busy working on improving the performance of the transistors by optimizing device structure, graphene quality and the gate dielectric.
滤光镜，电极，晶体管，液晶体本身以层状放置在一片薄玻璃板上，上面还盖着另外一片玻璃板，这类似于三明治的结构。
Layers of material which work as filters, electrodes, transistors and the liquid crystal itself are deposited onto a thin glass plate to form a sandwich that is covered with another pane of glass.
一个解决电流泄漏的想法是，将晶体管的设计变为三维结构。
One idea for dealing with leaks is to change that by moving transistor design into three dimensions.
基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。
The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
晶体管收音机的结构不像电视那样复杂。
A transistor radio is a less complicated structure than a TV.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
将单个元件组装成一台设备或一种结构的过程。例如，将大量的晶体管组成一个“集成”电路。
The process of incorporating separate items to form a single unit or structure; for example, the incorporation of a large number of transistors into an"integrated" circuit.
概述了薄膜晶体管液晶显示器基本结构与原理。
Summarizing the basic structure and fundamental of the thin film transistor liquid crystal display.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
对超导磁通流晶体管的结构、原理、特性及与高tc材料的适应性和应用状况作了简要的评述。
The structure, principle and characteristics of superconducting flux flow transistors as well as their applications and their adaptability to high TC materials are concisely introduced in this paper.
本文着重介绍全晶体管化X波段地面散射计的设计、结构与性能指标。
This article describes design construction and characterization of a transistorized X-band ground-based scatterometer.
同样，那些用来组成晶体管逻辑门和互连的结构图也是手工绘制的。
Similarly, the drawings representing the structures used to form the transistor logic gates and interconnects were done by hand.
随着生产工艺的提高，芯片上能集成越来越多的晶体管，多线程技术也逐步成为一种主流的处理器体系结构技术。
With the development of VLSI technology, a single chip can contain over one billion transistor. Multithreading technique is the developing trend of high performance processor in the future.
介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
该芯片的判决电路采用SCFL(源级耦合晶体管逻辑)的D触发器结构，根据矢量叠加原理设计，采用差动电流放大器构成可调移相器。
The decision circuit of the chip is applied with a DFF using SCFL structure and its tuned phase shifter with differential current amplifiers according to the principle of vector addition.
这种微细结构和薄膜晶体管可以在一个步骤中集成在一个绝缘表面上。
The fine structure and the thin-film transistor can be integrated on the one insulating surface in one step.
晶体管包含一栅结构、一源区和一漏区。
The transistor may include a gate structure, a source region, and a drain region.
本发明还提供了一种具有倒T形鳍片多重栅晶体管的集成电路结构。
The invention also relates to an integrated circuit structure with multiple-gate transistors with reverse T-shaped fins.
在上个世纪五十年代初期，基于半导体结构的新技术，在需要低功率放大的情况下可用晶体管替换三极管实现这一功能。
In the early 1950s, a new technology based on semiconductor construction would replace triodes with transistors, in cases where low-power amplification was needed.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
本发明主要是提供一种薄膜晶体管，其包括有一半导体层、一下重掺杂半导体层与一上重掺杂半导体层构成的内岛状结构。
A membrane transistor, including a semiconductor layer, an inner-island shaped structure composed of the upper semiconductor layer and the lower semiconductor layer.
本文介绍了多种类型的晶体管功率放大电路的结构、定性的工作原理和效率的主要影响因素。
In this paper, structures, qualitative operation principles and main factors involved into efficiency of kinds of transistors are introduced.
作为一个例子，介绍了电子波衍射晶体管的原理、结构、制造和性能。
As an example, an electron wave diffraction transistor is presented, including its principle, structure, performance and its fabrication.
谐振峰是限制激光二极管性能的因素之一，而在这种晶体管激光器结构中，没有观察到明显的谐振峰。
No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure.
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