电流源在模拟晶体管特性时极其有用。
Current sources are most useful in modeling the behavior of transistors.
将其与传统的晶体管图示仪相结合并通过单片机和串行通信在微机上显示晶体管特性曲线。
Combining with old transistor curve grapher, using single chip computer and serial port communication, the transistor characteristic curves is displayed on the microcomputer.
系统能够在硬件设备以及连线不变的前提下，改变软件程序就可以实现各种晶体管特性曲线的绘制和参数测试。
The instrument can get the different characteristic curves with different programs, using constructed virtual instrument system with the same hardware devices and wire connections.
提出了为清晰、稳定地获得高频下晶体管特性曲线、S参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。
A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, s parameters and the frequency matching parameters with the transistor individuality.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
对超导磁通流晶体管的结构、原理、特性及与高tc材料的适应性和应用状况作了简要的评述。
The structure, principle and characteristics of superconducting flux flow transistors as well as their applications and their adaptability to high TC materials are concisely introduced in this paper.
同时此系统也可以用于电镀，铝阳极氧化等电化学过程控制，以及晶体管直流特性测试等方面。
This system can be also used for the automatic control of the electro plating and aluminum anodizing process and the DC characteristic measurement of some semiconductor transistor.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.
由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
描述了改善静电感应晶体管（SIT）大电流特性的新方法。
Methods for improving the high current performance of static induction transistor (SIT) are presented.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
基于单电子系统半经典模型，分析了电阻耦合单电子晶体管的电学特性，得到其电学性能不随背景电荷分布变化的特点。
According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge.
讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。
The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region.
介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
实际中，这个特性总是用来定义MOS晶体管的闸极电极走线。
In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.
根据对碳纳米管场效应晶体管的电学特性的研究，搭建出一套简单的测试系统，对制备的器件进行了初步测试。
A simple test system has been prepared to test the carbon nanotube field effect transistors, base on the electrical properties.
这种特性对于制造需要快速转换的晶体管很重要。
This is important for making very fast switching transistors.
研究了低温多晶硅发射极晶体管的频率特性及其温度关系。
The temperature dependence of frequency characteristics of PET is researched on.
据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
实验结果表明，随着晶体管沟道长度的减小，内部节点电容对功耗恒定特性的作用逐渐减小，DDCVSL与SABL具有相近的防DPA攻击特性。
The experimental results demonstrate that DDCVSL and SABL all have a high DPA-resistance with the shrinking channel-length of the transistors.
本文讨论了复合开关晶体管的基本特性和开关特性，提供了实测数据和应用电路实例。
Both the fundamental properties and switching properties of compound switching transistor are discussed. The experimental test data and the practical examples of the application circuit are provided.
本文讨论了复合开关晶体管的基本特性和开关特性，提供了实测数据和应用电路实例。
Both the fundamental properties and switching properties of compound switching transistor are discussed. The experimental test data and the practical examples of the application circuit are provided.
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