在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
本文推导了用电路参数表示的晶体管一维直流电流—电压方程。
In this paper, the transistor one dimensional DC current-voltage equation which is indicated as circuit parameters is derived.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
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