根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。
With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.
也就是说，这种趋势就是通过提高晶体管的密度使芯片更小，并消耗更少的电能，也就意味着可以将手机做得更小，电池续航时间更长。
That is, the tendency is to use the increased density to make the same chip smaller and consume less power, to make phones smaller and make batteries last longer.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
此外还研究了高宽长比功率驱动MOS晶体管的版图优化设计，通过采用高密度的版图结构使有效宽长比密度提高了一倍，从而使其占用的版图面积为缩小为原来的一半。
Besides, in order to minimize the area of output driving MOSFET, high W/L density structure is adopted with effective W/L density being doubled compared with normal MOS structure.
此外还研究了高宽长比功率驱动MOS晶体管的版图优化设计，通过采用高密度的版图结构使有效宽长比密度提高了一倍，从而使其占用的版图面积为缩小为原来的一半。
Besides, in order to minimize the area of output driving MOSFET, high W/L density structure is adopted with effective W/L density being doubled compared with normal MOS structure.
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