经过反复实验，在现有设备条件下，为3dg460微波低噪声晶体管的研制提供了合格光刻版。
Experimenting repeatedly, by our limited equipments we provided the qualified photomask for the study of 3dg460 microwave low-noise transistor.
第六章研究了高阶统计量在晶体管低频噪声检测中的应用。
In chapter six, the application of higher order statistics in detection low-frequency noise of transistor is discussed.
本文中描述用振幅峰值的方法，测量面接触型晶体管OC70，OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。
The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method.
由此，提供包括相同导电型的晶体管的、能够降低噪声的影响的半导体装置和具备该半导体装置的显示装置。
Accordingly, a semiconductor device which is composed of conductivity type transistors that are identical and which is not affected by a noise and a display device including it are provided.
目前有关晶体管低频噪声测量仪器普遍存在的问题是测量误差大、时间长、所给噪声参数不完善。
Nowdays the problems commonly existing in the measurement of low frequency noise of transistors are, great errors, long time and imperfection of noise parameters.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
从根本上说，他们认为电阻和晶体管的噪声导致了这种结果。
Fundamentally, they find that the device noise from resistors and transistors creeps into the results.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
本文对微波晶体管宽带低噪声放大器的设计和实现进行了研究。
This paper deals with the process of microwave broadband and low noise amplifier design and research.
本文对微波晶体管宽带低噪声放大器的设计和实现进行了研究。
This paper deals with the process of microwave broadband and low noise amplifier design and research.
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