达林顿晶体管增益大、可靠性高，尤其在大功率应用中更加简便。
Darlington transistor is more convenience in power amplification areas because of its high power gain and high reliability.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
通过大功率晶体管（GTR）对驱动电路的要求，利用集成电路UAA4002设计了一种稳定性和可靠性高的理想驱动电路。
This paper introduces the giant transistor (GTR) ' s requirement for drive circuits, using integrated circuit UAA4002 designed a drive circuit of reliable and good performance.
单位面积晶体管的急剧增多，给NOC可靠性带来了挑战。
The sharp increase of transistors per unit area takes a challenge to the reliability of NOC.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
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