本文推导了用电路参数表示的晶体管一维直流电流—电压方程。
In this paper, the transistor one dimensional DC current-voltage equation which is indicated as circuit parameters is derived.
简述了微波晶体管s参数自动测试的必要性和迫切性。
This paper describes necessity and urgency of automatically testing the S-parameters of microwave transistors shortly.
目前有关晶体管低频噪声测量仪器普遍存在的问题是测量误差大、时间长、所给噪声参数不完善。
Nowdays the problems commonly existing in the measurement of low frequency noise of transistors are, great errors, long time and imperfection of noise parameters.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
提出了为清晰、稳定地获得高频下晶体管特性曲线、S参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。
A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, s parameters and the frequency matching parameters with the transistor individuality.
对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
系统能够在硬件设备以及连线不变的前提下，改变软件程序就可以实现各种晶体管特性曲线的绘制和参数测试。
The instrument can get the different characteristic curves with different programs, using constructed virtual instrument system with the same hardware devices and wire connections.
系统能够在硬件设备以及连线不变的前提下，改变软件程序就可以实现各种晶体管特性曲线的绘制和参数测试。
The instrument can get the different characteristic curves with different programs, using constructed virtual instrument system with the same hardware devices and wire connections.
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