本文着重介绍全晶体管化X波段地面散射计的设计、结构与性能指标。
This article describes design construction and characterization of a transistorized X-band ground-based scatterometer.
文中指出，在晶体管化的脉宽调制器中，在效率和失真两个方面。PANTEL原理电路优于基本PD M电路。
So far as efficiency and distortion are concerned, the transistorized pulse-duration modulator by PANTEL method is proved to be superior to that by the basic PDM circuit.
富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。
Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
根据公司的消息，真空管将不会被砷化镓晶体管取代。
According to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by GaAs transistors because they a much lower breakdown voltage.
5月，美国芯片巨头因特尔(Intel)公司(由摩尔博士与他人共同创办)宣布了一个计划，将这种市场名为“三栅极”的晶体管技术方案商业化。
In May Intel, an American chip giant (co-founded, as it happens, by Dr Moore), announced plans to commercialise a technological fix of this sort under the marketing name "Tri-Gate".
使用这种方法，可以使晶体管放大电路的分析和计算趋于简单化。
This method is able to make the analysis and calculation of the transistor amplifier circuit tend to be simplified.
因此，本发明不仅可提升产品良率以降低制作成本，且可满足薄膜晶体管液晶显示器日趋大型化、高画质化的需求。
So this invention can not only improve the product to reduce the cost but also meet the largely and the high quality demand of film transistor liquid crystal display device.
23晶体管封装自动键合机是高速、高精度机电一体化精密设备。
The auto Die Bonder for SOT - 23 transistor is a high - speed, high - precision, machinery electronics integrated equipment.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用。
The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight (TOF) setup is described.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
本发明公开了一种采用有源层图形化制备有机场效应晶体管的方法，包括：在绝缘衬底上涂敷光刻胶；
The invention discloses a method for preparing an organic field effect tube by using active layer graph. The method comprises the following steps of: coating photoresist on an insulated substrate;
本发明公开了一种采用有源层图形化制备有机场效应晶体管的方法，包括：在绝缘衬底上涂敷光刻胶；
The invention discloses a method for preparing an organic field effect tube by using active layer graph. The method comprises the following steps of: coating photoresist on an insulated substrate;
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