不同偏置电压的输入缓冲晶体管。
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。
Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated.
在干燥条件下，晶体管的偏置电流和没有被完全关闭。
Under dry conditions, the transistor will have no bias current and be fully off.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
NPN晶体管开关应用中，接口电路和驱动电路的应用。内置偏置电阻(100和100科姆)。
NPN transistor for switching applications, interface circuit and driver circuit applications. With built-in bias resistors (100 and 100 kOm).
NPN晶体管开关应用中，接口电路和驱动电路的应用。借助内置的偏置电阻(2.2和2.2科姆)。
NPN transistor for switching applications, interface circuit and driver circuit applications. With built-in bias resistors (2.2 and 2.2 kOm).
NPN晶体管开关应用中，接口电路和驱动电路的应用。借助内置的偏置电阻(2.2和2.2科姆)。
NPN transistor for switching applications, interface circuit and driver circuit applications. With built-in bias resistors (2.2 and 2.2 kOm).
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