综述了铜在芯片微刻槽中电沉积填充的过程、机理 ，并着重讨论了实现无裂缝和无空洞理想填充的主要因素—镀液的组成和添加剂的影响。
The procedure and mechanism of copper filling in the trench of the chip are reviewed, the effect of electrolyte components and additives on superfilling are discussed.
综述了铜在芯片微刻槽中电沉积填充的过程、机理 ，并着重讨论了实现无裂缝和无空洞理想填充的主要因素—镀液的组成和添加剂的影响。
The procedure and mechanism of copper filling in the trench of the chip are reviewed, the effect of electrolyte components and additives on superfilling are discussed.
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