研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Schottky barrier diodes with different metal on III nitride have been fabricated.
而II I族氮化物半导体场发射研究作为其光电特性的重要研究方向，引起了人们广泛关注。
As an important photoelectric exposure, field emission properties of III nitride semiconductors have attracted widely interestingness of researchers.
而II I族氮化物半导体场发射研究作为其光电特性的重要研究方向，引起了人们广泛关注。
As an important photoelectric exposure, field emission properties of III nitride semiconductors have attracted widely interestingness of researchers.
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